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| NID5004N Self-Protected FET with Temperature and Current Limit 40 V, 6.5 A, Single N-Channel, DPAK Self-protected FETs are a series of power MOSFETs which utilize ON Semiconductor HDPlust technology. The self-protected MOSFET incorporates protection features such as integrated thermal and current limits. The self-protected MOSFETs include an integrated Drain-to-Gate Clamp that provides overvoltage protection from transients and avalanche. The device is protected from Electrostatic Discharge (ESD) by utilizing an integrated Gate-to-Source Clamp. Features VDSS (Clamped) 40 V http://onsemi.com ID Typ (Limited) 6.5 A Drain Overvoltage Protection RDS(on) Typ 110 mW @ 10 V * * * * * * * * * * * * * * * Short Circuit Protection In Rush Current Limit Thermal Shutdown with Automatic Restart Avalanche Rated Overvoltage Protection ESD Protection (4 kV HBM) Controlled Slew Rate for Low Noise Switching AEC Q101 Qualified This is a Pb-Free Device Gate Input RG ESD Protection Temperature Limit Current Limit Current Sense Source Applications MARKING DIAGRAM DPAK CASE 369C STYLE 2 D5004N = Device Code Y = Year WW = Work Week G = Pb-Free Device 1 2 3 YYW D5 004NG Solenoid Driver Relay Driver Small Motors Lighting Relay Replacement Load Switching 1 = Gate 2 = Drain 3 = Source ORDERING INFORMATION Device NID5004NT4G Package DPAK (Pb-Free) Shipping 2500/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 April, 2006 - Rev. 1 1 Publication Order Number: NID5004N/D NID5004N MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Internally Clamped Gate-to-Source Voltage Drain Current Total Power Dissipation @ TA = 25C (Note 1) @ TA = 25C (Note 2) Thermal Resistance Junction-to-Case Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Single Pulse Drain-to-Source Avalanche Energy (VDD = 30 Vdc, VGS = 5.0 Vdc, IL = 1.8 Apk, L = 160 mH, RG = 25 W) (Note 3) Operating and Storage Temperature Range (Note 4) Continuous Symbol VDSS VGS ID PD 1.3 2.5 3.0 95 50 273 Value 44 "14 Internally Limited W Unit Vdc Vdc RqJC RqJA RqJA EAS C/W mJ TJ, Tstg -55 to 150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu. 2. Mounted onto 1 square pad size (700 sq/mm) FR4 PCB, 1 oz cu. 3. Not subject to Production Test 4. Normal pre-fault operating range. See thermal limit range conditions. http://onsemi.com 2 NID5004N MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Clamped Breakdown Voltage (VGS = 0 V, ID = 2 mA) Zero Gate Voltage Drain Current (VDS = 32 V, VGS = 0 V) Gate Input Current (VGS = 5.0 V, VDS = 0 V) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 150 mA) Threshold Temperature Coefficient Static Drain-to-Source On-Resistance (Note 5) (VGS = 10 V, ID = 2.0 A, TJ @ 25C) Static Drain-to-Source On-Resistance (Note 5) (VGS = 5.0 V, ID = 2.0 A, TJ @ 25C) (VGS = 5.0 V, ID = 2.0 A, TJ @ 150C) Source-Drain Forward On Voltage (IS = 7.0 A, VGS = 0 V) SWITCHING CHARACTERISTICS (Note 6) Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Slew Rate ON Slew Rate OFF RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 10% Vin to 10% ID RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 10% ID to 90% ID RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 90% Vin to 90% ID RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 90% ID to 10% ID RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 70% to 50% VDD RL = 6.6 W, Vin = 0 to 10 V, VDD = 13.8 V, ID = 2.0 A, 50% to 70% VDD td(on) trise td(off) tfall dVDS/dTon dVDS/dToff - - - - - - 97 282 930 690 64 28 115 300 1020 750 - - ns ns ns ns V/ms V/ms VGS(th) 1.0 - - - - - 1.85 5.0 110 130 240 0.9 2.2 - 130 150 270 1.1 V -mV/C mW mW V(BR)DSS IDSS IGSS 36 - - 40 27 45 44 100 200 V mA mA Symbol Min Typ Max Unit RDS(on) RDS(on) VSD V SELF PROTECTION CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 7) Current Limit VDS = 10 V, VGS = 5.0 V, TJ = 25C (Note 8) VDS = 10 V, VGS = 5.0 V, TJ = 100C (Note 6, 8) VDS = 10 V, VGS = 10 V, TJ = 25C (Note 6, 8) VGS = 5.0 V (Note 6) VGS = 5.0 V VGS = 10 V (Note 6) VGS = 10 V VDS = 0 V, VGS = 5.0 V, TJ = TJ > T(fault) (Note 6) VDS = 0 V, VGS = 10 V, TJ = TJ > T(fault) (Note 6) ILIM 4.0 4.0 - 150 - 150 - 5.5 12 6.5 5.5 7.9 180 10 180 20 5.2 11 11 11 - 200 - 200 - - A Temperature Limit (Turn-off) Thermal Hysteresis Temperature Limit (Turn-off) Thermal Hysteresis Input Current during Thermal Fault TLIM(off) DTLIM(on) TLIM(off) DTLIM(on) Ig(fault) C C C C mA ESD ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Electrostatic Discharge Capability Human Body Model (HBM) Machine Model (MM) (Note 6) 5. 6. 7. 8. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. Not subject to Production Test Fault conditions are viewed as beyond the normal operating range of the part. Current limit measured at 380 ms after gate pulse. ESD 4000 400 - - - - V http://onsemi.com 3 NID5004N TYPICAL PERFORMANCE CURVES 12 ID, DRAIN CURRENT (AMPS) 10 8 6 4 2 0 0 5.0 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 4.0 V 3.5 V VGS = 3.0 V 5.0 V 10 V TJ = 25C ID, DRAIN CURRENT (AMPS) 6 5 TJ = 25C 4 3 2 1 0 TJ = 100C TJ = -55C 0 1 2 3 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.15 0.14 0.13 0.12 0.11 0.10 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0.15 Figure 2. Transfer Characteristics ID = 2 A TJ = 25C TJ = 25C 0.14 0.13 0.12 0.11 0.10 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 ID, DRAIN CURRENT (AMPS) VGS = 5 V VGS = 10 V Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.4 1.2 1.0 0.8 0.6 0.4 -55 ID = 3.75 A VGS = 10 V VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1E-03 Figure 4. On-Resistance vs. Drain Current TJ = 100C 8E-04 6E-04 4E-04 2E-04 -35 -15 5 25 45 65 85 0E+00 0 5.0 10 15 20 25 30 35 40 45 TJ, JUNCTION TEMPERATURE (C) IDSS, LEAKAGE (A) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 NID5004N zl TYPICAL PERFORMANCE CURVES 12000 VDS = 0 V TA = 200C 8 IS, SOURCE CURRENT (AMPS) 7 6 VGS = 0 V TJ = 25C 10000 8000 IGSS (mA) 6000 4000 2000 0 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.0 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Diode Forward Voltage vs. Current Figure 8. Input Current vs. Gate Voltage 12 DRAIN CURRENT (AMPS) 10 8 6 4 2 0 0E+0 Current Limit Temperature Limit VGS = 10 V VGS = 5 V 1E-3 2E-3 3E-3 4E-3 5E-3 6E-3 7E-3 TIME (seconds) Figure 9. Short Circuit Response* *(Actual thermal cycling response in short circuit dependent on device power level, thermal mounting, and ambient temperature conditions) http://onsemi.com 5 NID5004N PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- C E S A 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M DIM A B C D E F G H J K L R S U V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NID5004N/D |
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